Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure

Mitsunori Hemmi; Takashi Sakai; Tomohiko Yamakami; Rinpei Hayashibe; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.740-742.805

Paper Titles

Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET
p.789

Filling of Deep Trench by Epitaxial SiC Growth
p.793

Ni, NiSi₂ and Si Secondary Ohmic Contacts on SiC with High Thermal Stability
p.797

Optimization of Copper Top-Side Metallization for High Performance SiC-Devices
p.801

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure
p.805

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
p.809

Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer
p.813

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars
p.817

First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications
p.821

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Preparation and Characterization of Deposited...

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure

Abstract:

The SiO₂ layer was deposited on the 4H-SiC Si face by the thermal decomposition of tetraethylorthosilicate(TEOS) in N₂ atmosphere to from MIS diodes. The post deposition annealing was effective to improve the interface properties. The interface state density of the deposited SiO₂/SiC MIS structure was estimated to be the order of 10¹¹ cm^-2eV^-1 by Terman method. The direct nitridation of SiC surface prior to the deposition of the SiO₂ layer was effective to reduce the interface state density.