Filling of Deep Trench by Epitaxial SiC Growth

K. Kojima; A. Nagata; S. Ito; Y. Sakuma; R. Kosugi; Yasunori Tanaka

doi:10.4028/www.scientific.net/MSF.740-742.793

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Filling of Deep Trench by Epitaxial SiC Growth

Filling of Deep Trench by Epitaxial SiC Growth

Abstract:

We performed deep trench filling by using epitaxial SiC growth. It was found that the trench filling condition depend on trench width. A high growth temperature was needed to fill a narrow trench and a low growth temperature was needed to fill a wide trench structure. We optimized the filling condition and successfully filled 7μ m deep and 2 μm wide trench without void formation. We also investigated the 2D doping distribution of the filled area by SSRM. As a result, it is found that the existence of a sub-trench was related to the generation of a doping distribution in the filled area. The trench filling mechanism and doping distribution are discussed.