4H-SiC Trench Schottky Diodes for Next Generation Products

Qing Chun Jon Zhang; Jennifer Duc; Van Mieczkowski; Brett Hull; Scott Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.740-742.781

Paper Titles

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Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation
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Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices
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Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
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Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET
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Filling of Deep Trench by Epitaxial SiC Growth
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Ni, NiSi₂ and Si Secondary Ohmic Contacts on SiC with High Thermal Stability
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-7424H-SiC Trench Schottky Diodes for Next Generation...

4H-SiC Trench Schottky Diodes for Next Generation Products

Abstract:

A novel trench JBS structure has been developed to reduce the electrical field at the Schottky interface. Compared to the conventional planar JBS structure, the new design has reduced the reverse leakage current by 1 order of magnitude at rated voltage. The much reduced field at the Schottky interface allows an increase in the drift doping concentration, which enables a significant chip size reduction on next generation SiC Schottky diodes. This progress makes it possible to fabricate high current rating (>50 A) SiC diodes for module applications.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

781-784

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.781

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Online since:

January 2013

Authors:

Qing Chun Jon Zhang, Jennifer Duc, Van Mieczkowski, Brett Hull, Scott Allen, John W. Palmour

Keywords:

Interface Field, Schottky Diode, Silicon Carbide (SiC), Termination, Trench Structure

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References

[1] Qingchun Zhang et. al, "Schottky diode", application No.: 13/229,749, filed date: September 14, 2011.

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