Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation

A. Hürner; T. Schlegl; B. Adelmann; H. Mitlehner; R. Hellmann; Anton J. Bauer; L. Frey

doi:10.4028/www.scientific.net/MSF.740-742.773

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Alloying of Ohmic Contacts to n-Type 4H-SiC via...

Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation

Abstract:

In this study, we present the results of alloying nickel as ohmic contact material to n-type 4H-SiC via a continuous wave fiber laser with different laser beam powers and processing times. The laser system exhibits an emitting wavelength of 1070 nm and a beam propagation factor M2 smaller than 1.1. Contact resistance was determined by current-voltage measurement using the two-terminal contact resistance method. The results indicate that a laser beam power of at least 100 W is mandatory to initialize contact silicidation. Although the contact resistance is improvable by longer processing times, our experiments outline the much higher impact of laser beam power to contact silicidation compared with processing time. For laser beam powers of 300 W and processing times of 0.5 s a contact resistance of 6.5 , comparable to contacts alloyed in a lamp heated furnace at 910 °C for 2 min with a contact resistance of 10.3 , was achieved.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

773-776

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.773

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Online since:

January 2013

Authors:

A. Hürner, T. Schlegl, B. Adelmann, H. Mitlehner, R. Hellmann, Anton J. Bauer, L. Frey

Keywords:

Back-Side Metallization, Contact Resistance, Laser, Nickel, n-Type 4H-SiC, Ohmic

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