The Influence of Post-Oxidation Annealing Process in O₂ and N₂O on the Quality of Al/SiO₂/n-Type 4H-SiC MOS Interface

Abstract:

The effect of the n-type 4H-SiC (0001) oxidation in wet O2 at temperature of 1175 °C followed by low temperature annealing in N2O at temperature of 800°C for 2 or 4 hours followed by high temperature annealing in nitrogen ambient on nitrogen distribution in silicon dioxide was investigated. It was shown that the oxidation and annealing have a strong impact on the behavior of electrical parameters of MOS capacitors using the oxides as gate dielectric what is probably an effect of nitrogen incorporation. The explanation of the observed electrical properties is included.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 753-756
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.753
• Online since: January 2013
• Authors: Krystian Król, Malgorzata Kalisz, Mariusz Sochacki, Jan Szmidt
• Keywords: High Temperature Oxidation, Oxide, Post-Oxidation Annealing

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