Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications

Amit K. Tiwari; Jonathan P. Goss; Patrick R. Briddon; Nicholas G. Wright; Alton B. Horsfall; Mark J. Rayson

doi:10.4028/www.scientific.net/MSF.740-742.761

Paper Titles

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability
p.745

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO₂/4H-SiC Interface
p.749

The Influence of Post-Oxidation Annealing Process in O₂ and N₂O on the Quality of Al/SiO₂/n-Type 4H-SiC MOS Interface
p.753

Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps
p.757

Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications
p.761

Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
p.767

Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation
p.773

Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices
p.777

4H-SiC Trench Schottky Diodes for Next Generation Products
p.781

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Transition Metal Oxide-Diamond Interfaces for...

Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications

Abstract:

Diamond surfaces with suitable adsorbed chemical species can exhibit both negative and positive electron affinities, arising from the complex electrostatic interplay between adsorbates and surface carbon atoms of diamond lattice. We presents the results of density functional calculations into the energetics and the electron affinity of diamond (100) surfaces terminated with the oxides of selected transition metals. We find that for a correct stoichiometry, oxides of transition metals, such as Ti and Zn, exhibit a large negative electron affinity of around 3 eV. The desorption of transition metal oxides is found to be highly endothermic. We therefore propose that transition metal oxides are promising for the surface coating of diamond-based electron emitters, as these exhibit higher thermal stability in comparison to the commonly used CsO terminations, while retaining the advantage of inducing a large negative electron affinity.