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Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface

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Abstract:

We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

749-752

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.749

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Online since:

January 2013

Authors:

Pétur Gordon Hermannsson, Fredrik Allerstam, Sigtryggur Hauksson, E.Ö. Sveinbjörnsson

Keywords:

Interface State, MOS, Sodium Enhanced Oxidation, TDRC

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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