Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

Krystian Król; Mariusz Sochacki; Marcin Turek; Jerzy Żuk; Henryk M. Przewlocki; Tomasz Gutt; Pawel Borowicz; M. Guziewicz; Jacek Szuber; Monika Kwoka; Piotr Kościelniak; Jan Szmidt

doi:10.4028/www.scientific.net/MSF.740-742.733

Paper Titles

Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces
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Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces
p.719

Effect of NH₃ Post-Oxidation Annealing on Flatness of SiO₂/SiC Interface
p.723

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl₃ Annealing
p.727

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.733

Effect of Suppressing Reoxidation at SiO₂/SiC Interface during Post-Oxidation Annealing in N₂O with Al₂O₃ Capping Layer
p.737

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing
p.741

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability
p.745

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO₂/4H-SiC Interface
p.749

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Influence of Nitrogen Implantation on Electrical...

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure

Abstract:

In this article, an influence of nitrogen implantation dosage on SiC MOS structure is analyzed using wide range of nitrogen implantation dose (between ~1013 – 1016). Authors analyzed electrical and material properties of investigated samples using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that surface state trap density is directly connected to implantation damage and thus implantation conditions. Using research results a trap origin at given energy can be concluded.

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Materials Science Forum (Volumes 740-742)

Pages:

733-736

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.733

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Online since:

January 2013

Authors:

Krystian Król, Mariusz Sochacki, Marcin Turek, Jerzy Żuk, Henryk M. Przewlocki, Tomasz Gutt, Pawel Borowicz, M. Guziewicz, Jacek Szuber, Monika Kwoka, Piotr Kościelniak, Jan Szmidt

Keywords:

Ion Implantation, Ion Implantation Induced Damage, Silicon Carbide (SiC), Thermal Oxidation

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References

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