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Effect of Suppressing Reoxidation at SiO2/SiC Interface during Post-Oxidation Annealing in N2O with Al2O3 Capping Layer

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Abstract:

In the present study, applying Al2O3 capping layer as suppressing layer of oxygen diffusion to SiC-MOS structures, we investigated the effect of Al2O3 layer as suppression of reoxidation at SiO2/SiC interface and decrease of Dit. We evaluated MOS capacitors which have SiO2/SiC and Al2O3/SiO2/SiC structure on 4H-SiC (0001) Si-face epitaxial wafers after post-oxidation anneal process (N2O:N2=1:9 [slm]) at temperatures ranging from 1000 °C to 1300 °C for 30min. The Al2O3/SiO2/SiC structure of reoxidation thickness, surface roughness and Dit are smaller than those of SiO2/SiC structure. These results show that the suppression of reoxidation during POA is important to improve the SiO2/SiC interfacial qualities.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

737-740

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.737

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Online since:

January 2013

Authors:

Taishi Kimura, Tsuyoshi Ishikawa, Narumasa Soejima, Katsuya Nomura, Takahide Sugiyama

Keywords:

4H-SiC, Al2O3, Interface Trap Density, MOS Capacitor, N2O Anneal, Post-Oxidation Annealing, SiO2/SiC Interface, Surface Morphology

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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