SiC High Power Devices – Challenges for Assembly and Thermal Management

Peter Friedrichs; Reinhold Bayerer

doi:10.4028/www.scientific.net/MSF.740-742.869

Paper Titles

Pressureless Silver Sintering Die-Attach for SiC Power Devices
p.851

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
p.855

Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
p.859

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
p.865

SiC High Power Devices – Challenges for Assembly and Thermal Management
p.869

Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
p.873

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
p.877

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
p.881

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
p.887

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742SiC High Power Devices – Challenges for Assembly...

SiC High Power Devices – Challenges for Assembly and Thermal Management

Abstract:

Silicon carbide power devices are intended and to enter new application regimes in power electronics, in fact, they are enabling components mainly if higher switching frequencies in power electronics are considered. This trend can be clearly observed since power density can be increased and efforts towards passive components and other mechanical contributions to the system can be reduced. However, this trend imposes new challenges towards the surrounding of the chips in form of the package itself and the whole system around. Stray components like inductances and impedance elements become crucial elements in the whole circuit what results in the fact that a simple exchange of silicon chips by silicon carbide in a given package can be ruled out. In addition different considerations regarding the thermal design especially in power modules arise when SiC chips are considered, triggered by the fact that the cost balance between assembly and chip is shifted compared to silicon based solutions. Thus, different optimization criteria can be used, leading to new design approaches for power modules. The following paper will give a first inside how those boundary conditions can be implemented in innovative solutions using SiC components.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

869-872

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.869

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Online since:

January 2013

Authors:

Peter Friedrichs, Reinhold Bayerer

Keywords:

Cooling, Parasitic Components, SiC Power Module, Thermal Resistance

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