Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts

Viorel Banu; Philippe Godignon; Xavier Jordá; Xavier Perpinya; José Millan

doi:10.4028/www.scientific.net/MSF.740-742.873

Paper Titles

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
p.855

Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
p.859

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
p.865

SiC High Power Devices – Challenges for Assembly and Thermal Management
p.869

Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
p.873

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
p.877

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
p.881

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
p.887

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
p.891

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Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts

Abstract:

This work presents experimental results on surge current capability of SiC Schottky diodes performed on free floating press-pack encapsulation technologies. For the tests, we used a home-made workbench. The aim of our studies is to improve the current robustness and power density of Silicon Carbide (SiC) devices able to operate at temperatures over 300C°. Various technological approaches have to be considered, mainly on the interconnection technique and metallization layers in order to improve the power density and temperature operation of the diodes. Our investigation showed a strong improvement of electro-thermal performances, and especially the surge current capability that is almost doubled by using press-pack encapsulation.