Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC

Volker Haeublein; Gerhard Temmel; Heinz Mitlehner; Gudrun Rattmann; Christian Strenger; Andreas Hürner; Anton J. Bauer; Heiner Ryssel; Lothar Frey

doi:10.4028/www.scientific.net/MSF.740-742.887

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Comparative Study of n-LIGBT and n-LDMOS...

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC

Abstract:

N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The comparison of the devices includes output and transfer characteristics, blocking characteristics, and temperature behavior.

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Materials Science Forum (Volumes 740-742)

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887-890

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.887

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Online since:

January 2013

Authors:

Volker Haeublein, Gerhard Temmel, Heinz Mitlehner, Gudrun Rattmann, Christian Strenger, Andreas Hürner, Anton J. Bauer, Heiner Ryssel, Lothar Frey

Keywords:

4H-SiC, Bipolar, LDMOS, LIGBT, SiC Device, Unipolar

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References

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