SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

Abstract:

Article Preview

4H-SiC PiN diodes for 6.5 kV were manufactured on both 4° and 8° off-cut substrates and subjected to an electrical stress test on wafer level and subsequent analysis of structural defects present in the active area of the diodes. For 8° off-cut diodes, the electrical characteristics with respect to leakage current and forward voltage drift are worse than the electrical characteristics of 4° off-cut diodes. Furthermore, a large number of stacking faults was found in 8° off-cut diodes, but little evidence for bipolar degradation was found in 4° off-cut diodes. Therefore, bipolar degradation was significantly reduced by avoiding BPDs in the active area of PiN diodes, i.e. by the use of 4° off-cut substrates. Furthermore, a strong correlation was found between the electrical screening test on wafer level and critical defects.

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Edited by:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

Pages:

899-902

DOI:

10.4028/www.scientific.net/MSF.740-742.899

Citation:

B. Kallinger et al., "SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV", Materials Science Forum, Vols. 740-742, pp. 899-902, 2013

Online since:

January 2013

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.