SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

Birgit Kallinger; Patrick Berwian; Jochen Friedrich; Christian Hecht; Dethard Peters; Peter Friedrichs; Bernd Thomas

doi:10.4028/www.scientific.net/MSF.740-742.899

Paper Titles

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Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
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Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
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16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
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SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
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Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
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Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742SXRT Investigations on Electrically Stressed...

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

Abstract:

4H-SiC PiN diodes for 6.5 kV were manufactured on both 4° and 8° off-cut substrates and subjected to an electrical stress test on wafer level and subsequent analysis of structural defects present in the active area of the diodes. For 8° off-cut diodes, the electrical characteristics with respect to leakage current and forward voltage drift are worse than the electrical characteristics of 4° off-cut diodes. Furthermore, a large number of stacking faults was found in 8° off-cut diodes, but little evidence for bipolar degradation was found in 4° off-cut diodes. Therefore, bipolar degradation was significantly reduced by avoiding BPDs in the active area of PiN diodes, i.e. by the use of 4° off-cut substrates. Furthermore, a strong correlation was found between the electrical screening test on wafer level and critical defects.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

899-902

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.899

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Online since:

January 2013

Authors:

Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Christian Hecht, Dethard Peters, Peter Friedrichs, Bernd Thomas

Keywords:

Dislocation, PiN Diode, Stacking Fault, Synchrotron X-Ray Topography

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