Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates

Dai Okamoto; Yasunori Tanaka; Norio Matsumoto; Makoto Mizukami; Chiharu Ota; Kazuto Takao; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.740-742.907

Paper Titles

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
p.891

16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
p.895

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
p.899

Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
p.903

Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
p.907

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport
p.911

900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET
p.915

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
p.921

A 69-mΩ 600-V-Class Hybrid JFET
p.925

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Development of High-Voltage 4H-SiC PiN Diodes on...

Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates

Abstract:

13-kV 4H-SiC PiN diodes were fabricated on 4° and 8° off-axis substrates and their electrical properties were examined. Small test PiN diodes with various JTE concentrations were fabricated and the dependence of JTE concentration was examined. The highest breakdown voltages were 14.6 and 14.1 kV at a JTE1 concentration of 1.9 × 10¹⁷ cm⁻³ for both the 4° and 8° off-axis substrates. Based on the results, 4 mm × 4 mm SiC PiN diodes were successfully fabricated and exhibited avalanche breakdown voltages of 14.0 and 13.5 kV for the 4° and 8° off-axis substrates, respectively. Forward voltage degradation was larger for the 8° off-axis substrates.