Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31
p.31
Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35
p.35
Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41
p.41
Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45
p.45
Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas
p.49
p.49
Defect Related Leakage Current Components in SiC Schottky Barrier Diode
p.53
p.53
Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57
p.57
Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63
p.63
The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
p.67
p.67
Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas
Abstract:
The etch pits on the C-face 4H-SiC substrate was produced by chlorine trifluoride gas at various temperatures. The etch pit density showed the comparable value to the current dislocation density level of the Si-face 4H-SiC, when the etching was performed around 713 K. Thus, the etch pit density obtained by this technique is expected to reveal the crystal quality.
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Periodical:
Materials Science Forum (Volume 725)
Pages:
49-52
Citation:
Online since:
July 2012
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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