Defect Related Leakage Current Components in SiC Schottky Barrier Diode

Kenichi Ohtsuka; T. Nakatani; A. Nagae; H. Watanabe; Y. Nakaki; Y. Fujii; K. Fujihira; S. Nakata; N. Yutani

doi:10.4028/www.scientific.net/MSF.725.53

Paper Titles

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas
p.49

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
p.67

Defect Propagation from 3C-SiC to III-Nitride
p.71

HomeMaterials Science ForumMaterials Science Forum Vol. 725Defect Related Leakage Current Components in SiC...

Defect Related Leakage Current Components in SiC Schottky Barrier Diode

Abstract:

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.

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Periodical:

Materials Science Forum (Volume 725)

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53-56

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.53

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Online since:

July 2012

Authors:

Kenichi Ohtsuka, T. Nakatani, A. Nagae, H. Watanabe, Y. Nakaki, Y. Fujii, K. Fujihira, S. Nakata, N. Yutani

Keywords:

Device Simulation, Power Device, Schottky, Silicon Carbide (SiC)

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