The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals

Ingmar Ratschinski; Hartmut S. Leipner; Frank Heyroth; Wolfgang Fränzel; Gunnar Leibiger; Frank Habel

doi:10.4028/www.scientific.net/MSF.725.67

Paper Titles

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas
p.49

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
p.67

Defect Propagation from 3C-SiC to III-Nitride
p.71

Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer
p.75

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
p.79

Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography
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HomeMaterials Science ForumMaterials Science Forum Vol. 725The Effect of the Indenter Orientation on the...

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals

Abstract:

(0001) GaN bulk crystals with a thickness of 3.4 mm and a density of in-grown dislocations of 3.5·10⁶ cm^-2 have been deformed at room temperature using a Vickers indenter at two different sample orientations in relation to the indenter. Dislocations and cracks at the indentations were investigated by means of optical microscopy and scanning electron microscopy in secondary electron contrast and cathodoluminescence imaging. The arrangement of indentation-induced dislocations and cracks is described and the orientation effect is discussed.

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Materials Science Forum (Volume 725)

Pages:

67-70

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.67

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Online since:

July 2012

Authors:

Ingmar Ratschinski, Hartmut S. Leipner, Frank Heyroth, Wolfgang Fränzel, Gunnar Leibiger, Frank Habel

Keywords:

Crack, Dislocation, Gallium Nitride (GaN)

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