Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer

Noriko Ohmori; Tomonori Uchimaru; Hiroyuki Fujimori; Jun Komiyama; Yoshihisa Abe; Shunichi Suzuki

doi:10.4028/www.scientific.net/MSF.725.75

Paper Titles

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
p.67

Defect Propagation from 3C-SiC to III-Nitride
p.71

Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer
p.75

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
p.79

Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography
p.85

Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping
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HomeMaterials Science ForumMaterials Science Forum Vol. 725Characterization of Dislocations in GaN Thin Film...

Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer

Abstract:

The dislocations in GaN thin film with GaN/AlN multilayer (ML) as the buffer layer were evaluated using transmission electron microscopy. A high density of dislocations parallel to the GaN/ML interface and a sudden decrease in the dislocation density at the GaN/ML interface were found. Dislocation propagation in the direction parallel to the GaN/ML interface by turning horizontally on the GaN/ML interface is considered to be effective in decreasing the dislocation density at the top layer of GaN.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.75

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Online since:

July 2012

Authors:

Noriko Ohmori, Tomonori Uchimaru, Hiroyuki Fujimori, Jun Komiyama, Yoshihisa Abe, Shunichi Suzuki

Keywords:

Dislocation, Gallium Nitride (GaN), Multilayer, TEM, Transmission Electron Microscopy (TEM)

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