Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping

Hidetoshi Suzuki; Takuo Sasaki; Masamitu Takahasi; Yoshio Ohshita; Masafumi Yamaguchi

doi:10.4028/www.scientific.net/MSF.725.89

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HomeMaterials Science ForumMaterials Science Forum Vol. 725Effects of in Content on Anisotropies in Strain...

Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping

Abstract:

The effects of In incorporation on anisotropies in the strain relaxation mechanisms of InGaAs on GaAs systems are investigated using a three-dimensional reciprocal space mapping (3D-RSM) technique. Relaxation processes are classified as belonging to one of the following four phases: no relaxation, gradual relaxation, rapid relaxation, and relaxation saturation. Anisotropies appear in the gradual relaxation phase and almost disappear in the rapid relaxation phase. These anisotropies are enhanced by In content. When In content is low, both α- and β-misfit dislocations (MDs) are observed at the same thickness; the density of α-MDs increases more rapidly than that of β-MDs. When In content is high, only α-MDs appear in the gradual relaxation phase. These results suggest that In atoms prevent nucleation and/or gliding of β-MDs.

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Materials Science Forum (Volume 725)

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89-92

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https://doi.org/10.4028/www.scientific.net/MSF.725.89

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July 2012

Authors:

Hidetoshi Suzuki, Takuo Sasaki, Masamitu Takahasi, Yoshio Ohshita, Masafumi Yamaguchi

Keywords:

Heteroepitaxy, In Situ Measurement, Molecular Beam Epitaxy, X-Ray Diffraction (XRD)

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