Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography

Hidetoshi Suzuki; Takuo Sasaki; Susumu Yamamoto; Yoshio Ohshita; Atsuhiko Fukuyama; Masafumi Yamaguchi

doi:10.4028/www.scientific.net/MSF.725.85

Paper Titles

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
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Defect Propagation from 3C-SiC to III-Nitride
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Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer
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Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
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Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography
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Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping
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Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study
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Defect Propagation in Broad-Area Diode Lasers
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HomeMaterials Science ForumMaterials Science Forum Vol. 725Distribution of Misfit Dislocations at the...

Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography

Abstract:

Anisotropies in misfit dislocations (MDs) at the interface of InGaAs/GaAs (001) are investigated by monochromatic X-ray topography (XRT) technique. Single MD line or several MD lines (MD bunching) are observed as white lines in XRT. Distribution, density, and number of MDs in one MD bunching are evaluated. The density of α-MDs is larger than that of β-MDs. Number of MDs in one MD bunching distribute with two peaks in both in-plane directions. In macroscopic view, α-MD bunching lay more orderly than the other. While in microscopic view, α-MDs gather for the range narrower than β-MDs.