Defect Propagation from 3C-SiC to III-Nitride

Yoshihisa Abe; Hiroyuki Fujimori; Arata Watanabe; Noriko Ohmori; Jun Komiyama; Shunichi Suzuki; Hideo Nakanishi; Takashi Egawa

doi:10.4028/www.scientific.net/MSF.725.71

Paper Titles

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
p.67

Defect Propagation from 3C-SiC to III-Nitride
p.71

Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer
p.75

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
p.79

Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography
p.85

Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping
p.89

HomeMaterials Science ForumMaterials Science Forum Vol. 725Defect Propagation from 3C-SiC to III-Nitride

Defect Propagation from 3C-SiC to III-Nitride

Abstract:

Role of 3C-SiC intermediate layer (3C-SiC IL) and a propagation of crystal defects from 3C-SiC IL to III-nitride epilayers has been investigated by observing the interface between the 3C-SiC IL and III-nitride epilayers. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride epilayers grown directly on Si, the layers grown at the initial stage are not flat. The 3C-SiC IL grown on Si (111) substrates has many stacking faults (SFs) that form along the 3C-SiC {111} planes. The initial III-nitride films have V-shaped trenches due to the SFs of the 3C-SiC IL. However, some SFs do not lead to the V-shaped defects.

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Materials Science Forum (Volume 725)

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71-74

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.71

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Online since:

July 2012

Authors:

Yoshihisa Abe, Hiroyuki Fujimori, Arata Watanabe, Noriko Ohmori, Jun Komiyama, Shunichi Suzuki, Hideo Nakanishi, Takashi Egawa

Keywords:

3C-SiC, III-Nitride, MOCVD, Si, TEM

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