This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

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eBook:

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ToC:

Table of contents

Editors:

Hiroshi Yamada-Kaneta and Akira Sakai

DOI:

https://doi.org/10.4028/b-9ZptHR

THEMA:

PDT, TGM

BISAC:

TEC021000

Keywords:

Functional Oxides, Impurity, Nanostructures, Nitride, Photovoltaics, SiC Defect Identification

Details:

Selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-14), September 25-29, 2011, Miyazaki, Japan

Pages:

324

Year:

2012

ISBN-13 (softcover):

9783037854426

ISBN-13 (CD):

9783037952610

ISBN-13 (eBook):

9783038138563

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Review from Ringgold Inc., ProtoView: Drawn from papers delivered at the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, held in Miyazaki Japan in September 2011, his collection of sixty-six articles on materials engineering examines a wide variety of topics relating to semiconductor research and manufacturing. The works are divided into sections covering general defects, nitride materials and devices, compounds, photo-voltaic materials and modules, impurity and nanostructure, and functional oxides and other materials. Individual papers include abstracts, notes tables and illustrations and a volume wide keyword index is provided. Contributors are academics and researchers from primarily Japanese institutions.