Books by Keyword: Impurity

Description: Lanthanum hexaboride is useful because it possesses a high melting point (2210C), a low work function, one of the highest known electron emissivities, and is stable in vacuum. This volume summarises the extant data on the properties of this material, including the: bulk modulus, conductivity, crystal structure, Debye temperature, defect structure, elastic constants, electronic structure, emissivity, Fermi surface, hardness, heat capacity, magnetoresistance, reflectivity, resistivity, specific heat, surface structure, thermal conductivity, thermoelectric power, toughness and work function. The issue also includes original research papers on: the Pitting Resistance of 316 Stainless Steel in Ringer’s Solution, the Effect of Different Modifiers on the Microstructure and Strength of Locally Developed A356 Al-Si Alloy, the Site Preference of Zr in NiAl Dislocation Cores and its Effects on Bond Character, the Effect of Different Combinations of Salt Modifier on the Mechanical Properties and Microstructure of A356 Al-Si Alloy, Quasicrystalline Phase Formation in High Frequency Induction Melted Al80Cu14Fe6 Alloy, Numerical Investigation of the Effect of Sprue Base Design on the Flow Pattern of Aluminum Gravity Castings, the Evaluation of Surface Preparation Techniques for Steel Substrates Prior to Coating, Thermal Desorption of Hydrogen from AISI 316L Stainless Steel and Pure Nickel, Structural and Concentration Heterogeneities during the Formation of Silicide Phases in the Ti(5nm)/Ni(24nm)/Si(001)Thin-Film System, Studies of the g-Factor and Hyperfine Structure Constant for Ir4+ in CdO, Theoretical Studies of the Local Structures and Spin Hamiltonian Parameters for the Cu2+ Centers in Alkali Barium Borate Glasses, Study of the Properties of CR-39 Polymer Irradiated with Alpha Particles, Review of Diffusion and Interfacial Reactions in Sandwich Thin-Film Couples and the Correlation Coefficient between Vickers Hardness and Nuclear Techniques.

Description: This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: “Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide” (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), “Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles” (M.Ragam, N.Sankar, K.Ramachandran), “The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl” (L.Chen, Z.Qiu), “Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow” (D.P.Adhikary, A.H.Wilkins), “Theoretical Investigations of the Defect Structure for Ni3+ in ZnO” (Z.H.Zhang, S.Y.Wu, S.X.Zhang).

Description: This eleventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective X (Volume 278) and the end of August 2009 (journal availability permitting).

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Description: The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).

Description: Condensed matter physics is an important field, not only for physicists, but also for other scientists and engineers. It encompasses all types of solid and liquid materials. Solid-state phenomena in metals, semiconductors, dielectrics, magnetic and optical materials in all their forms (crystalline, amorphous, nanocrystalline, polymer, liquid) are being intensely investigated. This is being done both for fundamental reasons, and because of the numerous actual and possible practical applications. Therefore, condensed matter physics is also the keystone of electrical, electronic and mechanical engineering, technology, and the development of its methods thus has a direct influence upon applied sciences.

Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Description: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.