Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs

Frank Gütle; Martina Baeumler; Michael Dammann; Markus Cäsar; Herbert Walcher; Patrick Waltereit; Wolfgang Bronner; Stefan Müller; Rudolf Kiefer; Rüdiger Quay; Michael Mikulla; Oliver Ambacher; Andreas Graff; Frank Altmann; Michel Simon

doi:10.4028/www.scientific.net/MSF.725.79

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HomeMaterials Science ForumMaterials Science Forum Vol. 725Microscopic Degradation Analysis of RF-Stressed...

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs

Abstract:

An AlGaN/GaN high electron mobility transistor (HEMT) stressed at 10 GHz and increased channel temperatures of T ≈ 260 °C has been analyzed by electroluminescence microscopy (ELM) and infrared thermography (IRT). After stress a negative threshold shift is seen in the electrical characteristics. Based on the current dependence of the electroluminescence (EL) intensity image and a local increase of T this shift can be assigned to the degradation of one of its gate fingers. Transmission electron microscopy (TEM) images of this gate finger revealed structural changes along the drain-side edge of the gate.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

79-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.79

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Online since:

July 2012

Authors:

Frank Gütle, Martina Baeumler, Michael Dammann, Markus Cäsar, Herbert Walcher, Patrick Waltereit, Wolfgang Bronner, Stefan Müller, Rudolf Kiefer, Rüdiger Quay, Michael Mikulla, Oliver Ambacher, Andreas Graff, Frank Altmann, Michel Simon

Keywords:

AlGaN/GaN HEMT Degradation, Electroluminescence Microscopy, TEM, Thermography

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References

[1] P. Waltereit, W. Bronner, R. Quay, M. Dammann, R. Kiefer, W. Pletschen, S. Müller, R. Aidam, H. Menner, L. Kirste, K. Köhler, M. Mikulla and O. Ambacher, AlGaN/GaN epitaxy and technology, Int. J. of Microwave and Wireless Technologies 2 (2010) 3-11.

DOI: 10.1017/s175907871000005x

Google Scholar

[2] G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, Reliability of GaN high-electron-mobility transistors, IEEE Transactions on Devices and Materials Reliability 8 (2008) 332-343.

DOI: 10.1109/tdmr.2008.923743

Google Scholar

[3] P. Ivo, A. Glowaki, E. Bahat-Treidel, R. Lossy, J. Würfl, C. Boit and G. Tränkle, Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements, Microelectron. Rel. 51 (2011) 217-223.

DOI: 10.1016/j.microrel.2010.09.029

Google Scholar

[4] M. Kuball, M. Ťapajna, R.J.T. Simms, M. Faqir and U.K. Mishra, AlGaN/GaN HEMT reliability and degradation evolution, Microelectron. Rel. 51 (2011) 195-200.

DOI: 10.1016/j.microrel.2010.08.014

Google Scholar

[5] N. Shigekawa, K. Shiojima and T. Suemitsu, Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors, Appl. Phys. Lett. 79 (2001) 1196-1198.

DOI: 10.1063/1.1398332

Google Scholar

[6] M. Bouya, N. Malbert, N. Labat, D. Carisetti, P. Perdu, J.C. Clement, B. Lambert and M. Bonnet, Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques, Microelectron. Reliab. 48, (2008) 1366–1369

DOI: 10.1016/j.microrel.2008.07.052

Google Scholar

[7] M. Baeumler, F. Gütle, V. Polyakov, M. Cäsar, M. Dammann, H. Konstanzer, W. Pletschen, W. Bronner, R. Quay, P. Waltereit, M. Mikulla. O. Ambacher, F. Bourgeois, R. Bethash, K. Riepe, P.J. van der Wel, J. Klappe and T. Rödle, Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy, J. Electron. Mat. 39 (2010) 756-760 and ref. therein.

DOI: 10.1007/s11664-010-1120-9

Google Scholar

[8] M. Dammann, IEEE Int. Integrated Reliability Workshop, Fallen Leaf Lake , CA, USA (2011).

Google Scholar

[9] A. Sarua, H. Ji, M. Kuball, M.J. Uren, T. Martin, K.P. Hilton and R.S. Balmer, Integrated mico-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures, IEEE Trans. Electron. Dev. 53 (2006) 2438-2447.

DOI: 10.1109/ted.2006.882274

Google Scholar

[10] U. Chowdhury, J.L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, S.-Y. Park, T. Lee, J. Wang, M.J. Kim, J. Joh and J.A. del Alamo, TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs, IEEE Electron. Dev. Lett. 29 (2008) 1098-1100.

DOI: 10.1109/led.2008.2003073

Google Scholar

[11] E.A. Douglas, C.Y. Chang, D.J. Cheney, B.P. Gila, C.F. Lo, L. Lu, R. Holzworth, P. Whiting, K. Jones, G.D. Via, J. Kim, S. Jang, F. Ren and S.J. Pearton, AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress Microelectron. Reliab. 51 (2011) 207–211.

DOI: 10.1016/j.microrel.2010.09.024

Google Scholar