Cathodoluminescence Study of Ammonothermal GaN Crystals

Vanesa Hortelano; Oscar Martínez; Juan Jiménez; Bu Guo Wang; S. Swider; Michael Suscavage; David Bliss

doi:10.4028/www.scientific.net/MSF.725.63

Paper Titles

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas
p.49

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63

The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
p.67

Defect Propagation from 3C-SiC to III-Nitride
p.71

Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer
p.75

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
p.79

HomeMaterials Science ForumMaterials Science Forum Vol. 725Cathodoluminescence Study of Ammonothermal GaN...

Cathodoluminescence Study of Ammonothermal GaN Crystals

Abstract:

GaN crystals grown in supercritical ammonia by the ammonothermal method were studied by cathodoluminescence (CL), both in image and spectrally resolved modes. The main extended defects and the incorporation of point defects and impurities in different growth sectors were revealed. The influence of the seeds, the role of the growth planes and the changes in the crystal quality during the growth run are discussed.

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Materials Science Forum (Volume 725)

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63-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.63

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Online since:

July 2012

Authors:

Vanesa Hortelano, Oscar Martínez, Juan Jiménez, Bu Guo Wang, S. Swider, Michael Suscavage, David Bliss

Keywords:

Ammonothermal GaN, Cathodoluminescence, Crystal Defects

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