Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation

Yong Zhao Yao; Yoshihiro Sugawara; Yukari Ishikawa; Katsunori Danno; Hiroshi Suzuki; Takeshi Bessho; Yoichiro Kawai; Noriyoshi Shibata

doi:10.4028/www.scientific.net/MSF.725.45

Paper Titles

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas
p.49

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

Cathodoluminescence Study of Ammonothermal GaN Crystals
p.63

HomeMaterials Science ForumMaterials Science Forum Vol. 725Different Dissociation Behavior of [11-20] and...

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation

Abstract:

Electron beam induced current (EBIC) and etch pit method have been used to study the dissociation behavior of basal plane dislocations (BPDs) in 4H-SiC under electron beam irradiation. When 20 kV scanning electron beam was applied for 1 h, it has been found that BPDs whose dislocation lines were along [11-20] off-cut direction dissociated into partial dislocations (PDs) forming a stacking fault (SF) between them; while no dissociation was found for BPDs extending along other directions. These results are discussed in terms of different formation energy of SFs expanding from a pure screw type and a mixed type BPD. In addition, the angle between dislocation line of a BPD and the [11-20] off-cut direction might also play a role in determining the minimum energy for SF formation.