Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

Xuan Zhang; Masahiro Nagano; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.725.27

Paper Titles

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45

HomeMaterials Science ForumMaterials Science Forum Vol. 725Basal Plane Dislocations in 4H-SiC Epilayers with...

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

Abstract:

Morphologies of basal plane dislocations (BPDs) in 4H-SiC epilayers doped with nitrogen or aluminum are explained in detail. While BPDs in low N-doped or Al-doped epilayers show the morphology of gliding dislocations responding to stresses, BPDs in highly N-doped (≥1.0×10¹⁸ cm^-3) epilayers appear different. Some of them are parallel to [11-20] while others are straight and tilt from [11-20]. Tilt BPDs were also studied by TEM. Factors that relate to such morphology are discussed.

You might also be interested in these eBooks

Defects-Recognition, Imaging and Physics in Semiconductors XIV

View Preview

Info:

Periodical:

Materials Science Forum (Volume 725)

Pages:

27-30

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.27

Citation:

Cite this paper

Online since:

July 2012

Authors:

Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), C-Core Partial Dislocation, Doping, Epitaxial Layer, Morpholoy, Si-Core Partial Dislocation, Stress

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] X.R. Huang, M. Dudley, W.M. Vetter, W. Huang, W. Si and C.H. Carter Jr., J. Appl. Cryst. 32 (1999) 516-524.

Google Scholar

[2] Y. Chen and M. Dudley, Appl. Phys. Lett. 91 (2007) 141918.

Google Scholar

[3] H. Tsuchida, I. Kamata, K. Kojima, K. Momose, M. Odawara, T. Takahashi, Y. Ishida and K. Matsuzawa, Mater. Res. Soc. Symp. Proc. 1069 (2008) 123-128.

Google Scholar

[4] M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki and K. Fukuda, J. Appl. Phys. 108 (2010) 013511.

Google Scholar

[5] X. Zhang, M. Nagano and H. Tsuchida, Mater. Sci. Forum 679-680 (2011) 306-309.

Google Scholar