Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide

Tatsuya Okada; Takuro Tomita; Shigeki Matsuo; Shuichi Hashimoto; Ryota Kashino; Takuto Ito

doi:10.4028/www.scientific.net/MSF.725.19

Paper Titles

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
p.3

Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

HomeMaterials Science ForumMaterials Science Forum Vol. 725Formation of Nanovoids in Femtosecond...

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide

Abstract:

Scanning transmission electron microscopy was carried out to study the three-dimensional microstructures of periodic strained layers induced by the irradiation of femtosecond laser pulses inside a silicon carbide single crystal. The cross section of laser-irradiated line consisted of a shell-shaped modified region surrounding a core region with no modification. The laser-modified region was composed of strained layers with a typical spacing of 200 nm. Nanovoids from 10 nm to 20 nm in diameter were observed. Three-dimensional tomographic images clearly show the plate-like shape of strained layers extending parallel to the electric field of the laser light and the random distribution of nanovoids in the strained layers. The three-dimensional observation provides insight into the formation mechanisms of periodic microstructures.

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Materials Science Forum (Volume 725)

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19-22

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.19

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Online since:

July 2012

Authors:

Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito

Keywords:

Femtosecond Laser, Nanovoid, Silicon Carbide (SiC)

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