Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

Ryohei Tanuma; Daisuke Mori; Isaho Kamata; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.725.3

Paper Titles

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
p.3

Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

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Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

Abstract:

This paper demonstrates the X-ray three-dimensional topography of basal-plane dislocations (BPDs) and threading edge dislocations (TEDs) in 4H-SiC. Cross-sectional imaging shows the propagation of BPDs from a substrate to an epilayer and the conversion of BPDs into TEDs near the epilayer/substrate interface. The strain analysis of TEDs exhibits the image of strains in the order of ±10-5. The observed strain images correlate well to simulation results.