Preface, Message and Committee
Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
p.3
p.3
Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7
p.7
Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11
p.11
Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15
p.15
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19
p.19
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23
p.23
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27
p.27
Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31
p.31
Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
Abstract:
Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in the near-infrared wavelength was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 725)
Pages:
15-18
Citation:
Online since:
July 2012
Authors:
Permissions:
Share:
Citation: