Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Shinkichi Hamada; Hisashi Yoshioka; Hiroshi Kawami; Nobuhiko Nakamura; Yoshitaka Setoguchi; Toru Matsunami; Kimito Nishikawa; Toshiyuki Isshiki

doi:10.4028/www.scientific.net/MSF.725.31

Paper Titles

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas
p.49

HomeMaterials Science ForumMaterials Science Forum Vol. 725Frank Partial Dislocation in 4H-SiC Epitaxial...

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Abstract:

We have been trying to improve a quality of crystal, using the metastable solvent epitaxy (MSE) method, one of the solution methods. In MSE, a Frank-type fault is formed by conversion of a threading screw dislocation (TSD) in the substrate. To study the status of the growth, we performed plane-viewed TEM observation. Analysis of Burgers vectors in the TEM image showed Frank PDs (Partial Dislocations) which do not include a components and Frank PDs which include a components. The total Burgers vectors of Frank-type fault including a components are represented as b=a/3+c, which indicates some TSDs in the substrate also include a components.