Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

Yong Zhao Yao; Koji Sato; Yoshihiro Sugawara; Yukari Ishikawa; Yoshihiro Okamoto; Noritaka Hayashi

doi:10.4028/www.scientific.net/MSF.725.23

Paper Titles

Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41

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Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

Abstract:

Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8o off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4o off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces along the slip plane [11-20](0001) effectively exerted by the abrasive particles on the steps.