Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography

Hirotaka Yamaguchi; Hirofumi Matsuhata

doi:10.4028/www.scientific.net/MSF.725.7

Paper Titles

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
p.3

Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

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Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography

Abstract:

Threading dislocations in 4H-SiC wafer were observed by using a double crystal X-ray topography technique. The incident beam was collimated by the first crystal so that the angular divergence was reduced to sufficiently smaller than the rocking curve of a diffraction of the specimen (the second crystal). At off-Bragg angles, cross-sectional projection of threading dislocations appeared on the topographic images. From these results, we found that outcrops of the screw dislocation at the wafer surfaces suffered from significant strain, giving strong contrast on the topograph even under the condition, $\vec{g}\cdot\vec{b}=0$. In addition, the edge and screw components in the mixed dislocations were clearly distinguished.