Preface, Message and Committee
Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
p.3
p.3
Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7
p.7
Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11
p.11
Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15
p.15
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19
p.19
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23
p.23
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27
p.27
Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31
p.31
Preface, Message and Committee
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 725)
Online since:
July 2012
Сopyright:
© 2012 Trans Tech Publications Ltd. All Rights Reserved
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