Defect Propagation in Broad-Area Diode Lasers

Martin Hempel; Jens W. Tomm; Ute Zeimer; Thomas Elsaesser

doi:10.4028/www.scientific.net/MSF.725.101

Paper Titles

Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography
p.85

Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping
p.89

Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study
p.97

Defect Propagation in Broad-Area Diode Lasers
p.101

Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers
p.105

Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves
p.109

Lock-In Thermography and Related Topics in Photovoltaic Research
p.115

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si
p.123

HomeMaterials Science ForumMaterials Science Forum Vol. 725Defect Propagation in Broad-Area Diode Lasers

Defect Propagation in Broad-Area Diode Lasers

Abstract:

A simple model is presented for the propagation of macroscopic defects within the quantum well (QW) plane of broad-area high power diode lasers. The catastrophic optical damage (COD) effect is considered the mechanism for creating an initial damage site and further development of defect pattern. The relations between the parameters used in the model and the actual physical properties of the semiconductor materials are discussed. Experimentally observed damage patterns are well described.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

101-104

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.101

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Online since:

July 2012

Authors:

Martin Hempel, Jens W. Tomm, Ute Zeimer, Thomas Elsaesser

Keywords:

Catastrophic Optical Damage, Defect Propagation, High Power Diode Laser

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References

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