Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves

Akihide Hamano; Seigo Ohno; Hiroaki Minamide; Hiromasa Ito; Yoshiyuki Usuki

doi:10.4028/www.scientific.net/MSF.725.109

Paper Titles

Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study
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Defect Propagation in Broad-Area Diode Lasers
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Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers
p.105

Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves
p.109

Lock-In Thermography and Related Topics in Photovoltaic Research
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Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si
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EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells
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Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique
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HomeMaterials Science ForumMaterials Science Forum Vol. 725Nondestructive Measurement of Carrier Density in...

Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves

Abstract:

A new nondestructive method using terahertz waves for determining the carrier density of GaAs is proposed. The reflectance around the longitudinal optical (LO) phonon frequency changes with carrier density, whereas the reflectance around the transverse optical (TO) phonon frequency is constant. The relative reflectance, which is evaluated from the reflectance at the two frequencies related to the TO and LO phonon, as a function of the carrier density of GaAs was calculated from the dielectric function. A broadband tunable terahertz source is convenient for producing two waves around these phonon frequencies. Imaging of n-type GaAs wafer using this new terahertz method is described.