Paper Titles
Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers
p.105
Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves
p.109
Lock-In Thermography and Related Topics in Photovoltaic Research
p.115
Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si
p.123
EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells
p.129
Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique
p.133
Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods
p.137
Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon
p.141
Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon
p.145

EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells

Article Preview

Abstract:

Interactions between intra-grain defects and metal impurities in multicrystalline silicon (mc-Si) were evaluated. After metal contaminations, EBIC contrasts at > 1.5o SA-GBs were more enhanced than those at Ni/1000 oC > Ni/600 oC. These results might attribute to Fe atoms form deeper energy levels of recombination centers than Ni atoms and the gettering abilities at SA-GBs depend on the misorientation angles. Many dark spots were observed in EBIC images in the Ni/600 oC. Since the dark spots corresponded to the etch pits, the dark spots might be dislocations decorated with Ni. The gettering abilities of SA-GBs depended on the misorientaion angles, and the recombination properties at SA-GBs and dark spots, such as small defects after metal contamination were different by annealing temperatures and the types of metal impurities.

You might also be interested in these eBooks
Solar Cells: Research and Development of Solar Cells View Preview
Defects-Recognition, Imaging and Physics in Semiconductors XIV View Preview

Info:

Periodical:

Materials Science Forum (Volume 725)

Pages:

129-132

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.129

Citation:

Cite this paper

Online since:

July 2012

Authors:

Takashi Sameshima, Naoto Miyazaki, Yuki Tsuchiya, Tomihisa Tachibana, Yoshio Ohshita, Kouji Arafune, Atsushi Ogura

Keywords:

Intra Grain Defects, Multicrystalline Silicon, Small Angle Grain Boundary, Solar Cell

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] G. Coletti, P. C. P. Brounsveld, G. Hahn, W. Warta, D. Macdonald, B. Ceccaroli, K. Wambach, N. L. Quang, and J. M. Fernandez, Adv. Funct. Mater, 21, 879, (2011).

DOI: 10.1002/adfm.201000849

Google Scholar

[2] B. Sopori, "Impurities and Defects in Photovoltics Si Devices", 10th international Work shop on the physics of semiconductor devices, (1999).

Google Scholar

[3] A. A. Istratov, T. Buonassisi, M. D. Pickett, M. Heuer, and E. R. Weber, Mater. Sci. Eng. B, 134, 282 (2006).

Google Scholar

[4] J. Lu, M. Wagener, and G. Rozgonyi, J. Appl. Phys., 94, 140 (2003).

Google Scholar

[5] M. Kittler, C. Ulhaqbouillet, and V. Higgs, J. Appl. Phys., 78, 4573 (1995).

Google Scholar

[6] S. Kumari, N. K. Arora and G. C. Jain, Solar Energy Materials, 5, 383 (1981).

Google Scholar

[7] Y. Ohshita, Y. Nishikawa, M. Tachibana, V. K. Tuong, T.Sasaki, N. Kojima, S. Tanaka, and M. Yamaguchi, J. Cryst. Growth, 275, e4 91 (2005).

Google Scholar

[8] J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyow, D. Yang, S. Ito, and F. Yin, Scr. Mater., 52, 1211 (2005).

Google Scholar

[9] K. Arafune, E. Ohiishi, H. Sai, Y. Terada, Y. Ohshita, and M. Yamaguchi, Jpn. J. Appl. Phys., 45, 6153 (2006).

Google Scholar

[10] T. Tachibana, J. Masuda, K. Imai, A. Ogura, Y. Ohshita, K. Arafune, and M. Tajima, Jpn. J. Appl. Phys., 48, 121202 (2009).

DOI: 10.1143/jjap.48.121202

Google Scholar

[11] J. Chen and T.Sekiguchi, Jpn. J. Appl. Phys., 46, 6489 (2007).

Google Scholar

[12] J. Chen, T. Sekiguchi, S. Nara, and D. Yang, J. Phys.: Condens. Matter, 16, S211, (2004).

Google Scholar

[13] A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process, 69, 13 (1999).

Google Scholar

[14] A. A. Istratov, P. Zhang, R. J. McDonald, A.R. Smith, M. Seacrist, J. Moreland, J.shen, R. Wahlich, and E. R. Weber, J. Appl. Phys., 97, 023505 (2005).

DOI: 10.1063/1.1836852

Google Scholar

[15] F. Secco d'Aragona, J. Electrochem. Soc., 119, 948 (1972).

Google Scholar

[16] T. Buonassisi, A. A. Istratov, S. Peters. C. Ballif, J. Isenberg, S. Riepe, W. Warta, R. Schindler, G. Willeke, Z. Cai, B. Lai, and E. R. Weber, Appl, Phys. Lett., 87, 121918 (2005).

DOI: 10.1063/1.2048819

Google Scholar

[17] W. T. Read and W. Shockley, Phys. Rev., 78, 275 (1950).

Google Scholar

[18] S. M. Sze and J. C. Irvin, Solid-State Electronics, 11, 599 (1968).

Google Scholar