EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells

Abstract:

Interactions between intra-grain defects and metal impurities in multicrystalline silicon (mc-Si) were evaluated. After metal contaminations, EBIC contrasts at > 1.5o SA-GBs were more enhanced than those at Ni/1000 oC > Ni/600 oC. These results might attribute to Fe atoms form deeper energy levels of recombination centers than Ni atoms and the gettering abilities at SA-GBs depend on the misorientation angles. Many dark spots were observed in EBIC images in the Ni/600 oC. Since the dark spots corresponded to the etch pits, the dark spots might be dislocations decorated with Ni. The gettering abilities of SA-GBs depended on the misorientaion angles, and the recombination properties at SA-GBs and dark spots, such as small defects after metal contamination were different by annealing temperatures and the types of metal impurities.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 129-132
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.129
• Online since: July 2012
• Authors: Takashi Sameshima, Naoto Miyazaki, Yuki Tsuchiya, Tomihisa Tachibana, Yoshio Ohshita, Kouji Arafune, Atsushi Ogura
• Keywords: Intra Grain Defects, Multicrystalline Silicon, Small Angle Grain Boundary, Solar Cell

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