Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon

Béchir Dridi  Rezgui; Virginie Mong-The Yen; Isabelle Périchaud; Damien Barakel; Marcel Pasquinelli; Olivier Palais

doi:10.4028/www.scientific.net/MSF.725.141

Paper Titles

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si
p.123

EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells
p.129

Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique
p.133

Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods
p.137

Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon
p.141

Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon
p.145

High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells
p.149

Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction
p.153

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si
p.157

HomeMaterials Science ForumMaterials Science Forum Vol. 725Behaviour of Light Induced Defect Generation and...

Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon

Abstract:

Light-induced defect generation seriously reduces the minority-carrier lifetime of crystalline silicon (c-Si) wafers which causes a decrease in solar cell efficiency. In this paper we investigate the impact of boron-oxygen complexes and iron impurities on the light induced minority-carrier lifetime degradation in c-Si, comparing electronic grade and upgraded metallurgical grade materials. For the later, the characteristic of the decay process is shown to be composed of a fast initial decay and a subsequent slow asymptotic decay. We conclude that the dissociation of iron-boron pairs must be taken into account to explain the light-induced lifetime reduction.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

141-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.141

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Online since:

July 2012

Authors:

Béchir Dridi Rezgui, Virginie Mong-The Yen, Isabelle Périchaud, Damien Barakel, Marcel Pasquinelli, Olivier Palais

Keywords:

Defect Recombination Center, Lifetime Degradation, Solar Grade Silicon

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