High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells

Abstract:

We demonstrated high-speed imaging of photoluminescence (PL) and electroluminescence (EL) for not only band-to-band but also multiple deep-level emissions in a multicrystalline Si solar cell. We used a cooled InGaAs camera with a photosensitive range of 900 - 1700 nm equipped with band-pass filters for the selective detection of various deep-level emissions. The exposure time for imaging was only 1 - 10 seconds. Comparisons of the present PL images with the microscopic PL mappings confirmed for us that essentially the same luminescence patterns were obtained.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 149-152
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.149
• Online since: July 2012
• Authors: Futoshi Okayama, Michio Tajima, Hiroyuki Toyota, Atsushi Ogura
• Keywords: Deep Level, Electroluminescence, Imaging, Multicrystalline Silicon, Photoluminescence (PL)

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