Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications

Abstract:

We investigated the new materials applicable for the field effect passivation layer in crystalline Si solar cells, ZrO2-Al2O3 and ZrO2-Y2O3 binary systems, by using combinatorial synthesis method. As-deposited samples indicated hysteresis curves and flat band-voltage (VFB) shifts at capacitance-voltage (C-V) measurements. After oxygen gas annealing (OGA) at 700 oC for 5min, an improvement of the hysteresis and a positive shift of VFB were observed. OGA process influenced defects density related to decreasing oxygen vacancy. OGA processed ZrO2 incorporated with 20 % Al2O3 and 15 % Y2O3 structures showed the maximized negative fixed charge of -5.8 × 1012 cm-2 and -7.8 × 1012 cm-2 in each system, respectively, suggesting that the ZrO2 based alloy systems were revealed to be the promising material for the passivation in the solar cell application.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 161-164
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.161
• Online since: July 2012
• Authors: Norihiro Ikeno, Tomihisa Tachibana, Hyunju Lee, Haruhiko Yoshida, Koji Arafune, Shinichi Satoh, Toyohiro Chikyow, Atsushi Ogura
• Keywords: Combinatorial Synthesis, Fixed Charge, Photovoltaic (PV), Surface Passivation

References

[1] B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. Lett., 89, 042112 (2006).

DOI: 10.1063/1.2240736

[2] B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys., 104, 113703 (2008).

[3] S. Miyajima, J. Irikawa, A. Yamada, and M. Konagai, Appl. Phys. Express., 3, 012301 (2010)

[4] T. T. Li and A. Cuevas, Phys. Status Solidi: Rapid Res. Lett., 3(5), 161 (2009).

[5] T. Tachibana, T. Sameshima, Y. Iwashita, Y. Kiyota, T. Chikyow, H. Yoshida, K. Arafune, S. Satoh, and A. Ogura, Jpn. J, Appl. Phys., 50, 04DP09 (2011).

DOI: 10.7567/jjap.50.04dp09

[6] K. Hasegawa, P. Ahmet, N. Okazaki, T. Hasegawa, K. Fujimoto, M. Watanabe, T. Chikyow, and H. Koinuma, Appl. Surf. Sci., 223, 229 (2004).

DOI: 10.1016/s0169-4332(03)00903-6

[7] MOS Physics and Technology, by E. H Nicollian and J. R. Brews (Jonh Wiley & Sons, Inc. 2003).

[8] V. K. Gueorguiev, P. V. Aleksandrova, T. E. Ivanov, and J. B. Koprinarova, Thin Solid Films, 517,1815 (2009).

DOI: 10.1016/j.tsf.2008.10.010

[9] W.J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J. C. Lee, Appl. Phys. Lett., 70(2), 3269 (2000).

[10] S. Stemmer, Z. Chen, R. Keding, J.-P. Maria, D. Wicaksana, and A. I. Kingon, J. Appl. Phys., 92(1), 82 (2004).

[11] C. Choi, K. L. Lee, and V. Narayanan, Appl. Phys. Lett., 98, 123506 (2011).

[12] K. Tse, D. Liu, K. Xiong, and J. Robertson, Microelectron. Eng., 84, 2028 (2007).

[13] B. Butz, P. Kruse, H. Störmer, D. Gerthsen, A. Müller, A. Weber, and E. I. Tiffée, Solid State Ionics, 177, 3275 (2006).

[14] S. Horita, M. Watanabe, and A. Masuda, Mater. Sci. Eng. B, 54, 79 (1998).