Temperature Dependence of Linear Thermal Expansion of CuGaSe2 Crystals

Akira Nagaoka; Kenji Yoshino; Tomoyasu Taniyama; Hideto Miyake

doi:10.4028/www.scientific.net/MSF.725.171

Paper Titles

Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction
p.153

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si
p.157

Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications
p.161

Change of the Characterization Techniques as Progress of CuInSe₂-Based Thin-Film PV Technology
p.165

Temperature Dependence of Linear Thermal Expansion of CuGaSe₂ Crystals
p.171

Reduction of Crack Formation in Transcription of Cu(In,Ga)Se₂ Thin Film Solar Cell Structure
p.175

Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode
p.179

2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module
p.183

Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module
p.187

HomeMaterials Science ForumMaterials Science Forum Vol. 725Temperature Dependence of Linear Thermal Expansion...

Temperature Dependence of Linear Thermal Expansion of CuGaSe₂ Crystals

Abstract:

CuGaSe₂ single crystals were grown by a traveling heater method, which is one of the solution growth techniques. The temperature dependence of the X-ray diffraction of CuGaSe₂ was determined between 10 and 300 K. The room temeprature XRD pattern of CuGaSe₂ corresponds to the ICDD data. No secondary phases are observed in the spectrum. The lattice constant of the a-axis increases and that of the c-axis decreases with increasing temperature. The linear thermal expansion of the c-axis calculated from the lattice constants indicates a negative value from 10 to 100 K.