Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction

Abstract:

A synchrotron white x-ray microbeam diffraction method was employed to investigate lattice distortion in multicrystalline silicon for photovoltaic cells. The measurements were carried out by scanning the sample, and transmission Laue patterns were observed at each position on the sample. Intensity and position maps of the Laue spots showed the distribution of the crystalline quality of the grains and the bending of the lattice planes. Strain and bending distributions were extracted from an analysis of Laue spots at diagonal positions, and these were compared with those obtained by other techniques.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 153-156
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.153
• Online since: July 2012
• Authors: Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe
• Keywords: Grain Boundary, Lattice Strain, Multicrystalline Silicon, Synchrotron Radiation, X-ray Microbeam, X-Ray Topography

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