Reduction of Crack Formation in Transcription of Cu(In,Ga)Se2 Thin Film Solar Cell Structure

Yasuhiro Abe; Takashi Minemoto; Hideyuki Takakura

doi:10.4028/www.scientific.net/MSF.725.175

Paper Titles

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si
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Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications
p.161

Change of the Characterization Techniques as Progress of CuInSe₂-Based Thin-Film PV Technology
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Temperature Dependence of Linear Thermal Expansion of CuGaSe₂ Crystals
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Reduction of Crack Formation in Transcription of Cu(In,Ga)Se₂ Thin Film Solar Cell Structure
p.175

Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode
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2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module
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Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module
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Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers
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HomeMaterials Science ForumMaterials Science Forum Vol. 725Reduction of Crack Formation in Transcription of...

Reduction of Crack Formation in Transcription of Cu(In,Ga)Se₂ Thin Film Solar Cell Structure

Abstract:

We focused on the reduction of the crack formation in the transfer of the Cu(In,Ga)Se₂ (CIGS) thin film solar cell structure. We found that the crack formation was reduced by increasing the In₂O₃:Sn thickness. We concluded that the whole thickness of the transferred layers is an important roll in the reduction of the crack formation. Moreover, we proposed the crack occupancy as a quantitative evaluation method of the crack inside the CIGS layer.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.175

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Online since:

July 2012

Authors:

Yasuhiro Abe, Takashi Minemoto, Hideyuki Takakura

Keywords:

Crack, Crack Occupancy, Cu(In,Ga)Se₂, Lift-Off Process, Scanning Electron Microscope (SEM)

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