Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers

Takao Abe

doi:10.4028/www.scientific.net/MSF.725.193

Paper Titles

Reduction of Crack Formation in Transcription of Cu(In,Ga)Se₂ Thin Film Solar Cell Structure
p.175

Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode
p.179

2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module
p.183

Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module
p.187

Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers
p.193

Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation
p.199

Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects
p.203

Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy
p.209

DLTS Study of Pd-H Complexes in Si
p.213

HomeMaterials Science ForumMaterials Science Forum Vol. 725Mono Vacancy Generation by Short Annealing in...

Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers

Abstract:

Using the peculiar behavior of nitrogen molecules in FZ silicon crystals contained with a high concentration of vacancies, this paper describes the following four important values: the estimated vacancy concentrations, the deep levels at 0.44 eV under the conduction band for n-type and at 0.66 eV over the valence band for p-type for mono vacancies and the diffusion coefficient of the silicon interstitials DI-FZ = 1.3×exp(-4.5 eV/kT).

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Periodical:

Materials Science Forum (Volume 725)

Pages:

193-198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.193

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Online since:

July 2012

Authors:

Takao Abe

Keywords:

Deep Level, Diffusion Coefficient, Doping Nitrogen, Nitrogen Molecule, Point Defect, Vacancy Concentration

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References

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