DLTS Study of Pd-H Complexes in Si

Sunao Abe; Ryuichi Goura; Koichi Shimoe; Yoichi Kamiura; Yoshifumi Yamashita; Takeshi Ishiyama

doi:10.4028/www.scientific.net/MSF.725.213

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HomeMaterials Science ForumMaterials Science Forum Vol. 725DLTS Study of Pd-H Complexes in Si

DLTS Study of Pd-H Complexes in Si

Abstract:

We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67 eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373 K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor: Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.213

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Online since:

July 2012

Authors:

Sunao Abe, Ryuichi Goura, Koichi Shimoe, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

Keywords:

Annealing, DLTS, Energy Level, Hydrogen, Palladium, Si

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References

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