Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region

Akihide Hamano; Yoshinobu Takatsu; Seigo Ohno; Hiroaki Minamide; Hiromasa Ito; Yoshiyuki Usuki

doi:10.4028/www.scientific.net/MSF.725.227

Paper Titles

Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy
p.209

DLTS Study of Pd-H Complexes in Si
p.213

Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements
p.217

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities
p.221

Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region
p.227

Reliability Improvement in Silicon Dioxide
p.231

Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs
p.235

Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers
p.239

Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)
p.243

HomeMaterials Science ForumMaterials Science Forum Vol. 725Rapid Imaging of Carrier Density of Si Using...

Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region

Abstract:

Rapid imaging of the carrier density of n-type silicon (Si) was carried out at the rate of 2 s per point using a terahertz wave of 4.4 THz generated from a tunable terahertz source. Reflectance of 4.4 THz as a function of carrier density was calculated using a simple Drude model. The carrier densities obtained from the terahertz imaging were 1 × 10¹⁸ cm⁻³ and 3 × 10¹⁸ cm⁻³, respectively.