Reliability Improvement in Silicon Dioxide

Masashi Minami; Yoichi Kamiura

doi:10.4028/www.scientific.net/MSF.725.231

Paper Titles

DLTS Study of Pd-H Complexes in Si
p.213

Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements
p.217

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities
p.221

Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region
p.227

Reliability Improvement in Silicon Dioxide
p.231

Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs
p.235

Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers
p.239

Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)
p.243

Effect of Si₃N₄ Coating on Strain and Fracture of Si Ingots
p.247

HomeMaterials Science ForumMaterials Science Forum Vol. 725Reliability Improvement in Silicon Dioxide

Reliability Improvement in Silicon Dioxide

Abstract:

There are two typical methods for silicon oxidation. One is pyrogenic oxidation using oxygen and hydrogen, the other is dry oxidation using oxygen. In this study various properties of these oxidation films were compared. The pyrogenic oxidation in turn could show better characteristic values in the all experiments. Furthermore, once dry oxidation was used even before gate oxidation, we found that dry oxidation made a source of defects generation at surface of the Si substrate.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

231-234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.231

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Online since:

July 2012

Authors:

Masashi Minami, Yoichi Kamiura

Keywords:

Defect generation, Oxidation, Pyrogenic, Silicon Dioxide, Time-Dependent Dielectric Breakdown, Weibull Distribution

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