Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs

Toshiyuki Nakashima; Tatsuya Idemoto; Isao Tsunoda; Kenichiro Takakura; Masashi Yoneoka; Hidenori Ohyama; Kenji Yoshino; Eddy Simoen; Cor Claeys

doi:10.4028/www.scientific.net/MSF.725.235

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Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities
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Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region
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Reliability Improvement in Silicon Dioxide
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Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs
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Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers
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Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)
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Effect of Si₃N₄ Coating on Strain and Fracture of Si Ingots
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Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction
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Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs

Abstract:

The effect of 2-MeV electron irradiation of Si_1-xGe_x S/D p-MOSFETs with different gate length and Ge concentration is studied. After electron irradiation, the maximum hole mobility decreases with increasing electron fluence for all gate lengths. In particular, after 5 x 10¹⁷e/cm² irradiation, the maximum hole mobility drastically decreases at short channel region for x = 0.3. Furthermore, a negative shift of the threshold voltage is clearly observed. These degradations can be explained both by the lattice defects and the stress relaxation in the Si channel created by atomic displacements.