Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

Gudrun Kissinger; Georg Raming; Reinhold Wahlich; Timo Müller

doi:10.4028/www.scientific.net/MSF.725.221

Paper Titles

Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects
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Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy
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DLTS Study of Pd-H Complexes in Si
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Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements
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Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities
p.221

Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region
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Reliability Improvement in Silicon Dioxide
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Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs
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Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers
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HomeMaterials Science ForumMaterials Science Forum Vol. 725Nitrogen Doped 300 mm Czochralski Silicon Wafers...

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

Abstract:

An internally gettering bulk defect zone and a defect denuded zone of at least 5 µm below the wafer surface were generated by out-diffusion of interstitial oxygen during annealing at temperatures in the range 1075-1100 °C in argon atmosphere. The CZ silicon material used was optimized with respect to voids and contained a central OSF region and an outer Pv region. Due to co-doping of at least 3×10¹³ cm^-3 nitrogen, a laterally homogeneous bulk microdefect density was obtained which is independent of the temperature of the out-diffusion anneal. The internal getter created in this way efficiently getters nickel impurities as demonstrated in a getter test with 6.6×10¹¹ cm^-3 of intentional Ni contamination. In the central OSF region of the as-grown nitrogen co-doped wafers, the nuclei capable of generating OSFs also degrade the gate oxide integrity. Out-diffusion annealing at 1075-1100°C dissolves most of the defects capable of generating OSFs and it strongly improves the integrity of 5 nm gate oxides.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

221-226

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.221

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Online since:

July 2012

Authors:

Gudrun Kissinger, Georg Raming, Reinhold Wahlich, Timo Müller

Keywords:

Nickel Gettering, Nitrogen Co-Doping, Silicon

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