Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy

Abstract:

Formation and annealing behavior of the 1.014-eV copper center and its dissociation product (center) in silicon are characterized by photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements. On the basis of the findings reported in this study, the structures of the centers are discussed.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 209-212
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.209
• Online since: July 2012
• Authors: Minoru Nakamura, Susumu Murakami
• Keywords: Annealing of Copper Centers, Copper Centers in Silicon, Deep-Level Transient Spectroscopy, Formation of Copper Centers, Photoluminescence (PL), Structures of Copper Centers

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